ds30116 rev. b-1 1 of 2 sb170 - SB1100 www.diodes.com diodes incorporated sb170 - SB1100 1.0a high voltage schottky barrier rectifier features maximum ratings and electrical characteristics @ t a = 25 c unless otherwise specified schottky barrier chip guard ring die construction for transient protection ideally suited for automatic assembly low power loss, high efficiency surge overload rating to 25a peak for use in low voltage, high frequency inverters, free wheeling, and polarity protection application high temperature soldering: 260 c/10 second at terminal plastic material: ul flammability classification rating 94v-0 mechanical data case: molded plastic terminals: plated leads - solderable per mil-std-202, method 208 polarity: cathode band weight: 0.3 grams (approx.) mounting position: any marking: type number single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. a a b c d characteristic symbol sb170 sb180 sb190 SB1100 unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 70 80 90 100 v rms reverse voltage v r(rms) 49 56 63 70 v average rectified output current @ t t = 85 c i o 1.0 a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 25 a forward voltage @ i f = 1.0a @ t a = 25 c v fm 0.80 v peak reverse current @ t a = 25 c at rated dc blocking voltage @ t a = 100 c i rm 0.5 10 ma typical junction capacitance (note 2) c j 80 pf typical thermal resistance junction to lead r jl 15 k/w typical thermal resistance junction to ambient (note 1) r ja 50 k/w operating and storage temperature range t j, t stg -65 to +125 c notes: 1. valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 2. measured at 1.0mhz and applied reverse voltage of 4.0v dc. do-41 dim min max a 25.4 b 4.1 5.2 c 0.71 0.86 d 2.0 2.7 all dimensions in mm t c u d o r p w e n
t c u d o r p w e n ds30116 rev. b-1 2 of 2 sb170 - SB1100 www.diodes.com 0.1 1.0 10 i , instantaneous forward current (a) f v , instantaneous forward voltage (v) f fi g .2 t y pical forward characteristics 20 0.5 0.1 0.9 1.3 1.7 2.1 t=25 c j 10 20 30 4 0 0 110100 i , peak forward surge current (a) fsm number of cycles at 60 hz fi g . 3 max non-repetitive peak fwd sur g ecurrent single half sine-wave (jedec method) t=150 c j 10 100 1000 0.1 1 10 100 c , juncti o n capacitance (pf) j v , reverse voltage (v) r fig. 4 typical junction capacitance t=25 c j f = 1.0mhz 0 0.5 1.0 25 50 75 100 125 150 i average forward current (a) (o), t , lead temperature ( c) l fi g . 1 forward current deratin g curve
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